Analysis of Quantum-well Heterojunction Emitter Bipolar Transistor Design

Hsu Myat Tin Swe; Hla Myo Tun; Maung Maung Latt

doi:doi:10.11648/j.nano.20200801.12

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Analysis of Quantum-well Heterojunction Emitter Bipolar Transistor Design

Hsu Myat Tin Swe, Hla Myo Tun, Maung Maung Latt

Published in American Journal of Nano Research and Applications (Volume 8, Issue 1)

Received: 16 March 2020 Accepted: 1 April 2020 Published: 13 April 2020

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Abstract

The paper presents the analysis of Quantum-well Heterojunction Emitted Bipolar Transistor Design based on physical parameters with numerical computations. The specific objective of this work is to enhance the physical performance of the Quantum-well Heterojunction Emitted Bipolar Transistor Design in real world applications. There have been considered on the III-V compound materials like GaAs for p-type layer, AlGaAs for n-type layer and InGaAs for quantum-well layer for different kinds of junctions which were developed in HEBT structure. In this analyses, the parameters for implemented HEBT structure were evaluated to find the multi-quantum-well band diagram, operating frequency (unity beta frequency), rise time, storage delay time, fall time, minority carrier distribution, current gain variation, voltage-current characteristics and phonon control on quantum-well device. In these analyses, the physical parameters were carried out based on the experimental studies from the recent research works and many literatures. The physical parameters which used in this HEBT structure have been provided to solve the real fabrication problems by using theoretical concepts. The quantum-well device based on III-V compound materials was performed by using numerical techniques with the help of MATLAB. The simulation results confirm that the developed HEBT structure was suitable for fabricating the real devices for high performance applications.

Published in	American Journal of Nano Research and Applications (Volume 8, Issue 1)
DOI	10.11648/j.nano.20200801.12
Page(s)	9-15
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2020. Published by Science Publishing Group

Keywords

Quantum-well Structure, III-V Compound, Heterojunction Emitter Bipolar Transistor, Semiconductor Device Fabrication, Numerical Analysis, MATLAB

References

[1]	P. M. Asbeck, M.-C. F. Chang, J. A. Higgins, N. H. Sheng, G. J. Sullivan, and K.-C. Wang, IEEE Trans. Electron Devices 36, 2032 (1989).
[2]	W. Hafez, W. Snodgrass, and M. Feng, Appl. Phys. Lett. 87, 252109 (2005).
[3]	D. A. Ahmari, G. Raghavan, Q. J. Hartmann, M. L. Hattendorf, M. Feng, and G. E. Stillman, IEEE Trans. Electron Devices 46, 634 (1999).
[4]	W. Liu, S.-K. Fan, T. Henderson, and D. Davito, IEEE Trans. Electron Devices 40, 1351 (1993).
[5]	M. Feng, N. Holonyak, and W. Hafez, Appl. Phys. Lett. 84, 151 (2004).
[6]	Sze S M 1981 Physics of Semiconductor Devices 2nd edn (New York: Wiley).
[7]	Singh J 2000 Semiconductor Devices: Basic Principles 1st edn (New York: Wiley).
[8]	Kasap S O 2006 Principles of Electronic Materials and Devices 3rd edn (New York: McGraw-Hill).
[9]	Neamen A D 2003 Semiconductor Physics and Devices: Basic Principles 3rd edn (New York: McGraw-Hill).
[10]	Rhoderick E H 1970 The physics of Schottky barriers J. Phys. D: Appl. Phys. 3 1153.
[11]	Sharma B L 1984 Metal-Semiconductor Schottky Barrier Junctions and their Applications 1st edn (New York: Plenum).
[12]	Son Y and Peterson R L 2017 The effects of localized tail states on charge transport mechanisms in amorphous zinc tin oxide Schottky diodes Semicond. Sci. Technol. 32 12LT02.
[13]	Ohmi T, Saito T, Shibata T and Nitta T 1988 Room-temperature copper metallization for ultralarge-scale integrated circuits by a low kinetic-energy particle process Appl. Phys. Lett. 52 2236
[14]	Raychaudhuri and Barun 1995 Some Studies on Electrical Characteristics of Metal Semiconductor Contacts with Thin Interfacial Insulating Layer PhD Thesis University of Calcutta.
[15]	Hsu Myat Tin Swe, Hla Myo Tun "Multi-Quantum Well Design for Heterojunction Emitter Bipolar Transistors (HEBTs)" Published in International Journal of Trend in Research and Development (IJTRD), ISSN: 2394-9333, Volume-7 \| Issue-1, February 2020, URL: http://www.ijtrd.com/papers/IJTRD 21950.pdf.
[16]	Hsu Myat Tin Swe, Hla Myo Tun, Myint Myint Than, Maung Maung Latt, “Design of Quantum-Well Heterojunction Biploar Transistor Based on Physical Parameters, International Conference on Science, Technology, and Management (ICSTM), Singapore, 2^nd-3^rd April 2020.

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APA Style

Hsu Myat Tin Swe, Hla Myo Tun, Maung Maung Latt. (2020). Analysis of Quantum-well Heterojunction Emitter Bipolar Transistor Design. American Journal of Nano Research and Applications, 8(1), 9-15. https://doi.org/10.11648/j.nano.20200801.12

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ACS Style

Hsu Myat Tin Swe; Hla Myo Tun; Maung Maung Latt. Analysis of Quantum-well Heterojunction Emitter Bipolar Transistor Design. Am. J. Nano Res. Appl. 2020, 8(1), 9-15. doi: 10.11648/j.nano.20200801.12

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AMA Style

Hsu Myat Tin Swe, Hla Myo Tun, Maung Maung Latt. Analysis of Quantum-well Heterojunction Emitter Bipolar Transistor Design. Am J Nano Res Appl. 2020;8(1):9-15. doi: 10.11648/j.nano.20200801.12

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@article{10.11648/j.nano.20200801.12,
  author = {Hsu Myat Tin Swe and Hla Myo Tun and Maung Maung Latt},
  title = {Analysis of Quantum-well Heterojunction Emitter Bipolar Transistor Design},
  journal = {American Journal of Nano Research and Applications},
  volume = {8},
  number = {1},
  pages = {9-15},
  doi = {10.11648/j.nano.20200801.12},
  url = {https://doi.org/10.11648/j.nano.20200801.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.nano.20200801.12},
  abstract = {The paper presents the analysis of Quantum-well Heterojunction Emitted Bipolar Transistor Design based on physical parameters with numerical computations. The specific objective of this work is to enhance the physical performance of the Quantum-well Heterojunction Emitted Bipolar Transistor Design in real world applications. There have been considered on the III-V compound materials like GaAs for p-type layer, AlGaAs for n-type layer and InGaAs for quantum-well layer for different kinds of junctions which were developed in HEBT structure. In this analyses, the parameters for implemented HEBT structure were evaluated to find the multi-quantum-well band diagram, operating frequency (unity beta frequency), rise time, storage delay time, fall time, minority carrier distribution, current gain variation, voltage-current characteristics and phonon control on quantum-well device. In these analyses, the physical parameters were carried out based on the experimental studies from the recent research works and many literatures. The physical parameters which used in this HEBT structure have been provided to solve the real fabrication problems by using theoretical concepts. The quantum-well device based on III-V compound materials was performed by using numerical techniques with the help of MATLAB. The simulation results confirm that the developed HEBT structure was suitable for fabricating the real devices for high performance applications.},
 year = {2020}
}

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TY  - JOUR
T1  - Analysis of Quantum-well Heterojunction Emitter Bipolar Transistor Design
AU  - Hsu Myat Tin Swe
AU  - Hla Myo Tun
AU  - Maung Maung Latt
Y1  - 2020/04/13
PY  - 2020
N1  - https://doi.org/10.11648/j.nano.20200801.12
DO  - 10.11648/j.nano.20200801.12
T2  - American Journal of Nano Research and Applications
JF  - American Journal of Nano Research and Applications
JO  - American Journal of Nano Research and Applications
SP  - 9
EP  - 15
PB  - Science Publishing Group
SN  - 2575-3738
UR  - https://doi.org/10.11648/j.nano.20200801.12
AB  - The paper presents the analysis of Quantum-well Heterojunction Emitted Bipolar Transistor Design based on physical parameters with numerical computations. The specific objective of this work is to enhance the physical performance of the Quantum-well Heterojunction Emitted Bipolar Transistor Design in real world applications. There have been considered on the III-V compound materials like GaAs for p-type layer, AlGaAs for n-type layer and InGaAs for quantum-well layer for different kinds of junctions which were developed in HEBT structure. In this analyses, the parameters for implemented HEBT structure were evaluated to find the multi-quantum-well band diagram, operating frequency (unity beta frequency), rise time, storage delay time, fall time, minority carrier distribution, current gain variation, voltage-current characteristics and phonon control on quantum-well device. In these analyses, the physical parameters were carried out based on the experimental studies from the recent research works and many literatures. The physical parameters which used in this HEBT structure have been provided to solve the real fabrication problems by using theoretical concepts. The quantum-well device based on III-V compound materials was performed by using numerical techniques with the help of MATLAB. The simulation results confirm that the developed HEBT structure was suitable for fabricating the real devices for high performance applications.
VL  - 8
IS  - 1
ER  -

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Author Information

Hsu Myat Tin Swe

Department of Electronic Engineering, Yangon Technological University, Yangon, Myanmar
Hla Myo Tun

Department of Electronic Engineering, Yangon Technological University, Yangon, Myanmar
Maung Maung Latt

Department of Electronic Engineering, Technological University (Taungoo), Taungoo, Myanmar

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Plain Text BibTeX RIS

APA Style

Hsu Myat Tin Swe, Hla Myo Tun, Maung Maung Latt. (2020). Analysis of Quantum-well Heterojunction Emitter Bipolar Transistor Design. American Journal of Nano Research and Applications, 8(1), 9-15. https://doi.org/10.11648/j.nano.20200801.12

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ACS Style

Hsu Myat Tin Swe; Hla Myo Tun; Maung Maung Latt. Analysis of Quantum-well Heterojunction Emitter Bipolar Transistor Design. Am. J. Nano Res. Appl. 2020, 8(1), 9-15. doi: 10.11648/j.nano.20200801.12

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AMA Style

Hsu Myat Tin Swe, Hla Myo Tun, Maung Maung Latt. Analysis of Quantum-well Heterojunction Emitter Bipolar Transistor Design. Am J Nano Res Appl. 2020;8(1):9-15. doi: 10.11648/j.nano.20200801.12

Copy | Download

@article{10.11648/j.nano.20200801.12,
  author = {Hsu Myat Tin Swe and Hla Myo Tun and Maung Maung Latt},
  title = {Analysis of Quantum-well Heterojunction Emitter Bipolar Transistor Design},
  journal = {American Journal of Nano Research and Applications},
  volume = {8},
  number = {1},
  pages = {9-15},
  doi = {10.11648/j.nano.20200801.12},
  url = {https://doi.org/10.11648/j.nano.20200801.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.nano.20200801.12},
  abstract = {The paper presents the analysis of Quantum-well Heterojunction Emitted Bipolar Transistor Design based on physical parameters with numerical computations. The specific objective of this work is to enhance the physical performance of the Quantum-well Heterojunction Emitted Bipolar Transistor Design in real world applications. There have been considered on the III-V compound materials like GaAs for p-type layer, AlGaAs for n-type layer and InGaAs for quantum-well layer for different kinds of junctions which were developed in HEBT structure. In this analyses, the parameters for implemented HEBT structure were evaluated to find the multi-quantum-well band diagram, operating frequency (unity beta frequency), rise time, storage delay time, fall time, minority carrier distribution, current gain variation, voltage-current characteristics and phonon control on quantum-well device. In these analyses, the physical parameters were carried out based on the experimental studies from the recent research works and many literatures. The physical parameters which used in this HEBT structure have been provided to solve the real fabrication problems by using theoretical concepts. The quantum-well device based on III-V compound materials was performed by using numerical techniques with the help of MATLAB. The simulation results confirm that the developed HEBT structure was suitable for fabricating the real devices for high performance applications.},
 year = {2020}
}

Copy | Download

TY  - JOUR
T1  - Analysis of Quantum-well Heterojunction Emitter Bipolar Transistor Design
AU  - Hsu Myat Tin Swe
AU  - Hla Myo Tun
AU  - Maung Maung Latt
Y1  - 2020/04/13
PY  - 2020
N1  - https://doi.org/10.11648/j.nano.20200801.12
DO  - 10.11648/j.nano.20200801.12
T2  - American Journal of Nano Research and Applications
JF  - American Journal of Nano Research and Applications
JO  - American Journal of Nano Research and Applications
SP  - 9
EP  - 15
PB  - Science Publishing Group
SN  - 2575-3738
UR  - https://doi.org/10.11648/j.nano.20200801.12
AB  - The paper presents the analysis of Quantum-well Heterojunction Emitted Bipolar Transistor Design based on physical parameters with numerical computations. The specific objective of this work is to enhance the physical performance of the Quantum-well Heterojunction Emitted Bipolar Transistor Design in real world applications. There have been considered on the III-V compound materials like GaAs for p-type layer, AlGaAs for n-type layer and InGaAs for quantum-well layer for different kinds of junctions which were developed in HEBT structure. In this analyses, the parameters for implemented HEBT structure were evaluated to find the multi-quantum-well band diagram, operating frequency (unity beta frequency), rise time, storage delay time, fall time, minority carrier distribution, current gain variation, voltage-current characteristics and phonon control on quantum-well device. In these analyses, the physical parameters were carried out based on the experimental studies from the recent research works and many literatures. The physical parameters which used in this HEBT structure have been provided to solve the real fabrication problems by using theoretical concepts. The quantum-well device based on III-V compound materials was performed by using numerical techniques with the help of MATLAB. The simulation results confirm that the developed HEBT structure was suitable for fabricating the real devices for high performance applications.
VL  - 8
IS  - 1
ER  -

Copy | Download